Vishay Si2305CDS Type P-Channel MOSFET, 4.4 A, 8 V Enhancement, 3-Pin SOT-23 SI2305CDS-T1-GE3
- RS-stocknr.:
- 710-3248
- Fabrikantnummer:
- SI2305CDS-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 5,32
(excl. BTW)
€ 6,44
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- 2.380 stuk(s) klaar voor verzending vanaf een andere locatie
- Laatste verzending 50.580 stuk(s) vanaf 09 januari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,266 | € 5,32 |
| 200 - 480 | € 0,186 | € 3,72 |
| 500 - 980 | € 0,16 | € 3,20 |
| 1000 - 1980 | € 0,133 | € 2,66 |
| 2000 + | € 0,12 | € 2,40 |
*prijsindicatie
- RS-stocknr.:
- 710-3248
- Fabrikantnummer:
- SI2305CDS-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 8V | |
| Series | Si2305CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 960mW | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 8V | ||
Series Si2305CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 960mW | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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