Vishay Si2323DDS Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2323DDS-T1-GE3
- RS-stocknr.:
- 812-3110
- Fabrikantnummer:
- SI2323DDS-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 8,24
(excl. BTW)
€ 9,98
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 40 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 640 stuk(s) vanaf 13 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,412 | € 8,24 |
| 200 - 480 | € 0,305 | € 6,10 |
| 500 - 980 | € 0,255 | € 5,10 |
| 1000 - 1980 | € 0,226 | € 4,52 |
| 2000 + | € 0,165 | € 3,30 |
*prijsindicatie
- RS-stocknr.:
- 812-3110
- Fabrikantnummer:
- SI2323DDS-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | Si2323DDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.79V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series Si2323DDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.79V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay Si2323DDS Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 SI2347DS-T1-GE3
- Vishay Si2305CDS Type P-Channel MOSFET, 4.4 A, 8 V Enhancement, 3-Pin SOT-23 SI2305CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3
- Vishay TP0610K Type P-Channel MOSFET, 185 mA, 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3