onsemi PowerTrench Type N-Channel MOSFET, 1.7 A, 20 V Enhancement, 3-Pin SOT-23 FDN335N
- RS-stocknr.:
- 671-0422
- Fabrikantnummer:
- FDN335N
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 2,83
(excl. BTW)
€ 3,42
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 350 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 38.790 stuk(s) vanaf 09 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,283 | € 2,83 |
| 100 - 240 | € 0,244 | € 2,44 |
| 250 - 490 | € 0,211 | € 2,11 |
| 500 - 990 | € 0,186 | € 1,86 |
| 1000 + | € 0,169 | € 1,69 |
*prijsindicatie
- RS-stocknr.:
- 671-0422
- Fabrikantnummer:
- FDN335N
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94mm | |
| Width | 1.4 mm | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.94mm | ||
Width 1.4 mm | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi PowerTrench Type N-Channel MOSFET, 1.7 A, 20 V Enhancement, 3-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET, 3 A, 80 V Enhancement, 6-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET, 4.3 A, 60 V Enhancement, 6-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET, 6.1 A, 30 V Enhancement, 6-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET, 3 A, 20 V Enhancement, 3-Pin SOT-23