onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23
- RS-stocknr.:
- 124-1693
- Fabrikantnummer:
- BSS123
- Fabrikant:
- onsemi
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Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 186,00
(excl. BTW)
€ 225,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 12.000 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 21.000 stuk(s) vanaf 29 april 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 6000 | € 0,062 | € 186,00 |
| 9000 - 21000 | € 0,052 | € 156,00 |
| 24000 - 42000 | € 0,05 | € 150,00 |
| 45000 - 96000 | € 0,045 | € 135,00 |
| 99000 + | € 0,043 | € 129,00 |
*prijsindicatie
- RS-stocknr.:
- 124-1693
- Fabrikantnummer:
- BSS123
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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