Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3
- RS-stocknr.:
- 279-9959
- Fabrikantnummer:
- SIRS4301DP-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 4.896,00
(excl. BTW)
€ 5.925,00
(incl. BTW)
Voeg 3000 eenheden toe voor gratis bezorging
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 1,632 | € 4.896,00 |
*prijsindicatie
- RS-stocknr.:
- 279-9959
- Fabrikantnummer:
- SIRS4301DP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIRS | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0015Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 548nC | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIRS | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0015Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 548nC | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Enhance power dissipation and lower RthJC
Fully lead (Pb)-free device
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