Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

RS-stocknr.:: 279-9920
Fabrikantnummer:: SIHK155N60E-T1-GE3
Fabrikant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

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RS-stocknr.:: 279-9920
Fabrikantnummer:: SIHK155N60E-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	156W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 156W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK155N60E-T1-GE3

Vishay SIHK Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHK155N60E-T1-GE3

This MOSFET is a high-voltage, N-channel switching transistor designed for surface-mount power applications. It operates in enhancement mode and is suitable for electronic systems requiring substantial drain current and elevated power handling across a wide temperature range. The device is intended for mounting in a compact PowerPAK 10x12 package and conforms to RoHS requirements.

Features and Benefits:

• 600V rating enables use in high-voltage power stages
• 19A continuous drain current supports sustained load currents
• 156W maximum power dissipation manages heavy switching duty
• 0.158Ω low Rds(on) reduces conduction losses
• 36nC typical gate charge facilitates predictable switching performance
• 30V maximum gate drive permits standard logic-level gate control

Applications

• Suitable for SMPS primary-side switching in power supplies
• Ideal for industrial motor drive inverter stages
• Used for high-voltage DC-DC conversion modules
• Can be used for quasi-relays and solid-state switching arrays
• Suitable for telecoms and industrial power distribution equipment

What thermal range can it withstand in demanding installations?

It is specified to operate from -55°C up to 150°C, allowing deployment in harsh industrial environments.

What mounting considerations are relevant for thermal management?

The surface-mount PowerPAK 10x12 format permits close heatsinking and low thermal-resistance PCB layouts when paired with appropriate copper pour and vias.

How many pins are present and how does that affect PCB layout?

The device uses an 8-pin configuration, enabling dedicated drain, source and gate connections for compact high-current routing.

What is the typical forward voltage and where is it relevant?

The forward voltage is 1.2V, which is pertinent for body-diode conduction scenarios and reverse-recovery performance during switching transients.