Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

RS-stocknr.:: 268-8311
Fabrikantnummer:: SIHK105N60E-T1-GE3
Fabrikant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 2 eenheden)*

€ 11,54

(excl. BTW)

€ 13,96

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

2.050 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
2 - 48	€ 5,77	€ 11,54
50 - 98	€ 5,19	€ 10,38
100 - 248	€ 4,24	€ 8,48
250 - 998	€ 4,16	€ 8,32
1000 +	€ 3,21	€ 6,42

*prijsindicatie

RS-stocknr.:: 268-8311
Fabrikantnummer:: SIHK105N60E-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	132W
	Typical Gate Charge Qg @ Vgs	53nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 132W
	Typical Gate Charge Qg @ Vgs 53nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK105N60E-T1-GE3

Land van herkomst:: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60E-T1-GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching on printed circuit boards. It operates across a wide temperature span for industrial environments and is suited to applications requiring significant power handling and elevated drain-source voltage resilience. The device is mounted in a low-profile PowerPAK package to facilitate thermal management on PCB assemblies.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching
• 24A continuous drain current supports heavy load currents
• 0.1Ω low Rds(on) reduces conduction losses
• 132W maximum dissipation improves thermal headroom
• 53nC typical gate charge balances switching speed and drive effort
• Vgs 30V gate limit allows robust gate-drive ranges

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive inverters requiring high voltage
• Can be used for power factor correction circuits
• Suitable for utility and renewable-energy interface electronics

What temperature range can it reliably operate within?

The device is specified to function from -55°C up to 150°C, allowing use in demanding thermal environments.

What packaging and mounting considerations apply for thermal performance?

It is supplied in a PowerPAK 10x12 package intended for PCB mounting, which aids heat dissipation when paired with appropriate copper planes and thermal vias.

How does gate charge affect driver selection?

With a typical total gate charge of 53nC, drivers must supply sufficient current for desired switching speeds while managing gate-drive losses.

What is the maximum allowable gate-source voltage?

The maximum Vgs is 30V, so gate-drive circuits should be designed to stay within that limit to avoid device stress.