Vishay SI Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3
- RS-stocknr.:
- 279-9893
- Fabrikantnummer:
- SI2392BDS-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 11,00
(excl. BTW)
€ 13,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
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Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 20 | € 0,55 | € 11,00 |
| 40 - 80 | € 0,481 | € 9,62 |
| 100 - 280 | € 0,43 | € 8,60 |
| 300 - 980 | € 0,421 | € 8,42 |
| 1000 + | € 0,412 | € 8,24 |
*prijsindicatie
- RS-stocknr.:
- 279-9893
- Fabrikantnummer:
- SI2392BDS-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SI | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.149Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.1W | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SI | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.149Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.1W | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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