Vishay SI Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3
- RS-stocknr.:
- 279-9892
- Fabrikantnummer:
- SI2392BDS-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 501,00
(excl. BTW)
€ 606,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,167 | € 501,00 |
*prijsindicatie
- RS-stocknr.:
- 279-9892
- Fabrikantnummer:
- SI2392BDS-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | SI | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.149Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.1W | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series SI | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.149Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.1W | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Gerelateerde Links
- Vishay SI Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3
- Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- Vishay Si3476DV Type N-Channel MOSFET, 4.6 A, 80 V Enhancement, 6-Pin SOT-23 SI3476DV-T1-GE3
- Vishay Si2374DS Type N-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2374DS-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3