Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3 SPD04P10PLGBTMA1
- RS-stocknr.:
- 273-7550
- Fabrikantnummer:
- SPD04P10PLGBTMA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit artikel weer voorradig zal zijn, het wordt door de fabrikant stopgezet.
- RS-stocknr.:
- 273-7550
- Fabrikantnummer:
- SPD04P10PLGBTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -4.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO252-3 | |
| Series | SPD04P10PL G | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 940mV | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Width | 40mm | |
| Height | 1.5mm | |
| Standards/Approvals | AEC Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -4.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO252-3 | ||
Series SPD04P10PL G | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 940mV | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Width 40mm | ||
Height 1.5mm | ||
Standards/Approvals AEC Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.
Logic level
RoHS compliant
Enhancement mode
Pb free lead plating
Gerelateerde Links
- Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET, -16.4 A, 60 V Enhancement, 3-Pin PG-TO252-3 IPD900P06NMATMA1
- Infineon OptiMOS Type P-Channel MOSFET, 6.5 A, 60 V Enhancement, 3-Pin PG-TO252-3 IPD25DP06NMATMA1
- Infineon OptiMOS Type P-Channel MOSFET, 4.3 A, 60 V Enhancement, 3-Pin PG-TO252-3 IPD40DP06NMATMA1
- Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon SPD18P06P G Type P-Channel MOSFET, -18.6 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPD18P06PGBTMA1
- Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPP18P06PHXKSA1
- Infineon OptiMOS N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1
