Infineon CoolMOSTMPFD7 MOSFET, 16 A, 650 V Enhancement, 3-Pin PG-TO-220
- RS-stocknr.:
- 273-7461
- Fabrikantnummer:
- IPAN60R210PFD7SXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,67
(excl. BTW)
€ 4,44
(incl. BTW)
Voeg 50 eenheden toe voor gratis bezorging
Op voorraad
- 500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 1,835 | € 3,67 |
| 10 - 18 | € 1,535 | € 3,07 |
| 20 - 98 | € 1,51 | € 3,02 |
| 100 - 248 | € 1,23 | € 2,46 |
| 250 + | € 1,13 | € 2,26 |
*prijsindicatie
- RS-stocknr.:
- 273-7461
- Fabrikantnummer:
- IPAN60R210PFD7SXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-220 | |
| Series | CoolMOSTMPFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-220 | ||
Series CoolMOSTMPFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET offers Cool MOS revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. The latest Cool MOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price to performance ratio and state of the art ease of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Fast body diode
Extremely low losses
Low switching losses Eoss
Excellent thermal behaviour
Excellent commutation ruggedness
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