Infineon IGLT65 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1

RS-stocknr.:: 351-889
Fabrikantnummer:: IGLT65R035D2ATMA1
Fabrikant:: Infineon

Infineon IGLT65 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1

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RS-stocknr.:: 351-889
Fabrikantnummer:: IGLT65R035D2ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HDSOP-16
	Series	IGLT65
	Mount Type	Surface
	Pin Count	16
	Maximum Drain Source Resistance Rds	0.042Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	154W
	Typical Gate Charge Qg @ Vgs	7.7nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HDSOP-16
	Series IGLT65
	Mount Type Surface
	Pin Count 16
	Maximum Drain Source Resistance Rds 0.042Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 154W
	Typical Gate Charge Qg @ Vgs 7.7nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLT65R035D2ATMA1

Land van herkomst:: MY

Infineon IGLT65 Series MOSFET, 650V Drain Source Voltage, 47A Continuous Drain Current - IGLT65R035D2ATMA1

This MOSFET is a high-voltage N-channel enhancement device designed for industrial power switching and control. It operates across a wide ambient range and is intended for surface-mount circuit assemblies where robust drain-to-source voltage handling and moderate gate charge are required. The package supports multi-pin mounting and integration into compact power modules for demanding electronic systems.

Features and Benefits:

• 650V drain-source rating for high-voltage switching applications
• 47A continuous drain current enabling elevated current handling
• 0.042 Ω RDS(on) for reduced conduction losses
• 154W power dissipation to manage thermal loading
• 7.7 nC typical gate charge for efficient gate driving
• PG‑HDSOP‑16 surface-mount package for compact PCB layouts

Applications

• Suitable for industrial high-voltage inverter stages
• Used with power supplies requiring 47A switching capability
• Ideal for motor-drive front‑ends in industrial equipment
• Can be used for snubber and clamp circuits in high-voltage systems
• Suitable for compact power modules needing surface-mount MOSFETs

What temperature extremes can it tolerate in operation?

It is specified to operate between -55 °C and 150 °C, allowing use in harsh thermal environments and extended‑temperature industrial installations.

How many pins does the package present for PCB layout considerations?

The component uses a 16‑pin configuration which informs footprint design and thermal via placement for effective heat spreading.

What gate drive voltage limitations should be observed?

The maximum gate‑to‑source voltage is 10V, so gate driver circuits must limit drive amplitude accordingly.

Does the device meet industry standard testability for industrial applications?

It is produced to JEDEC criteria for industrial use, aligning it with common qualification and reliability expectations for that sector.