Infineon HEXFET Type N-Channel MOSFET, 160 A, 75 V DirectFET
- RS-stocknr.:
- 273-5220
- Fabrikantnummer:
- AUIRF7759L2TR
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,01
(excl. BTW)
€ 9,69
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 58 stuk(s) vanaf 05 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 49 | € 8,01 |
| 50 - 99 | € 6,66 |
| 100 - 499 | € 6,18 |
| 500 - 1999 | € 5,73 |
| 2000 + | € 5,60 |
*prijsindicatie
- RS-stocknr.:
- 273-5220
- Fabrikantnummer:
- AUIRF7759L2TR
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MX
The Infineon Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform coupled with the latest silicon technology allows it to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC to DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on resistance and low Qg per silicon area. Additional features of this MOSFET are high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
RoHS compliant
Dual sided cooling
High power density
Automotive qualified
Low parasitic parameters
Lead free and halogen free
Advanced process technology
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