Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET

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Subtotaal (1 rol van 4800 eenheden)*

€ 3.940,80

(excl. BTW)

€ 4.766,40

(incl. BTW)

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  • Verzending vanaf 06 april 2026
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Aantal stuks
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4800 +€ 0,821€ 3.940,80

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RS-stocknr.:
257-9313
Fabrikantnummer:
IRF7480MTRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

217A

Maximum Drain Source Voltage Vds

40V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

1.2mΩ

Typical Gate Charge Qg @ Vgs

123nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

96W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 40V single n channel strong IRFET power mosfet in a direct FET ME package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Dual side cooling capability

Low package height of 0.7mm

Low parasitic (1 to 2 nH) inductance package

100 percent lead free (No ROHS exemption)

Silicon optimized for applications switching below 100 kHz

Product qualification according to JEDEC standard

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