Infineon IQE Type N-Channel MOSFET, 205 A TSON IQE013N04LM6ATMA1
- RS-stocknr.:
- 258-3921
- Fabrikantnummer:
- IQE013N04LM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,60
(excl. BTW)
€ 4,36
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 4.854 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,80 | € 3,60 |
| 20 - 48 | € 1,495 | € 2,99 |
| 50 - 98 | € 1,405 | € 2,81 |
| 100 - 198 | € 1,295 | € 2,59 |
| 200 + | € 1,205 | € 2,41 |
*prijsindicatie
- RS-stocknr.:
- 258-3921
- Fabrikantnummer:
- IQE013N04LM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 205A | |
| Series | IQE | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Forward Voltage Vf | 1V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 205A | ||
Series IQE | ||
Package Type TSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Forward Voltage Vf 1V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power-MOSFET is best-in-class power MOSFET optimizes the end user experience by challenging the status quo in power density and form factor. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling a more ergonomic design. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.
superior thermal performance in RthJC
Optimized layout possibilities
Standard and centre-gate footprint
High current capability
More efficient use of PCB area
Highest power density and performance
Optimized footprint for MOSFET parallelization with Centre-Gate
Gerelateerde Links
- Infineon IQE Type N-Channel MOSFET, 205 A TSON
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V TTFN
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V TTFN IQE013N04LM6CGATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 9-Pin WHTFN
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 8-Pin WHSON
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 9-Pin WHTFN IQE013N04LM6CGSCATMA1
- Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 8-Pin WHSON IQE013N04LM6SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 306 A, 60 V TSON