Infineon OptiMOS Type N-Channel MOSFET, 306 A, 60 V TSON
- RS-stocknr.:
- 258-0678
- Fabrikantnummer:
- BSC012N06NSATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 7.590,00
(excl. BTW)
€ 9.185,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 1,518 | € 7.590,00 |
*prijsindicatie
- RS-stocknr.:
- 258-0678
- Fabrikantnummer:
- BSC012N06NSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 306A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 306A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS MOSFETs in SuperSO8 package extend OptiMOS 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Lower full load temperature
Less paralleling
Reduced overshoot
Increased system power density
Smaller size
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