Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1
- RS-stocknr.:
- 258-3877
- Fabrikantnummer:
- IPG20N06S2L35AATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,61
(excl. BTW)
€ 8,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 24.865 stuk(s) vanaf 05 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,322 | € 6,61 |
| 50 - 120 | € 1,192 | € 5,96 |
| 125 - 245 | € 1,112 | € 5,56 |
| 250 - 495 | € 1,032 | € 5,16 |
| 500 + | € 0,86 | € 4,30 |
*prijsindicatie
- RS-stocknr.:
- 258-3877
- Fabrikantnummer:
- IPG20N06S2L35AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Larger source lead frame connection for wire bonding and same thermal and electrical performance as a DPAK with the same die size.
Dual N-channel Logic Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
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