Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON
- RS-stocknr.:
- 223-8519
- Fabrikantnummer:
- IPG20N06S2L65AATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 1.535,00
(excl. BTW)
€ 1.855,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 15.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,307 | € 1.535,00 |
*prijsindicatie
- RS-stocknr.:
- 223-8519
- Fabrikantnummer:
- IPG20N06S2L65AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 43W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 43W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Height 1mm | ||
Width 5.9 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
Gerelateerde Links
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L65AATMA1
- Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L07AATMA1
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON