Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 258-3868
- Fabrikantnummer:
- IPD90P04P405ATMA2
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 2.057,50
(excl. BTW)
€ 2.490,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 30 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,823 | € 2.057,50 |
*prijsindicatie
- RS-stocknr.:
- 258-3868
- Fabrikantnummer:
- IPD90P04P405ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -90A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -90A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Gerelateerde Links
- Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- Infineon IPD Type P-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252
- Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2
- Infineon IPD Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252
