Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2
- RS-stocknr.:
- 258-3867
- Fabrikantnummer:
- IPD85P04P407ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 4,03
(excl. BTW)
€ 4,88
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 4.568 stuk(s) vanaf 02 november 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,015 | € 4,03 |
| 20 - 48 | € 1,81 | € 3,62 |
| 50 - 98 | € 1,70 | € 3,40 |
| 100 - 198 | € 1,57 | € 3,14 |
| 200 + | € 1,45 | € 2,90 |
*prijsindicatie
- RS-stocknr.:
- 258-3867
- Fabrikantnummer:
- IPD85P04P407ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -85A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -85A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
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