Infineon IPA Type N-Channel MOSFET, 5.7 A, 800 V N, 3-Pin TO-220 IPA80R1K0CEXKSA2
- RS-stocknr.:
- 258-3776
- Fabrikantnummer:
- IPA80R1K0CEXKSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,13
(excl. BTW)
€ 4,998
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 494 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,065 | € 4,13 |
| 20 - 48 | € 1,965 | € 3,93 |
| 50 - 98 | € 1,88 | € 3,76 |
| 100 - 198 | € 1,79 | € 3,58 |
| 200 + | € 1,67 | € 3,34 |
*prijsindicatie
- RS-stocknr.:
- 258-3776
- Fabrikantnummer:
- IPA80R1K0CEXKSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | IPA | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 32W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series IPA | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 32W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS CE is high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading super junction MOSFET supplier with best-in-class innovation.
Low specific on-state resistance
Very low energy storage in output capacitance @ 400V
High reliability
Ease-of-use
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