Infineon IPA Type N-Channel MOSFET, 72 A, 60 V N TO-220
- RS-stocknr.:
- 258-3766
- Fabrikantnummer:
- IPA040N06NM5SXKSA1
- Fabrikant:
- Infineon
Subtotaal (1 tube van 50 eenheden)*
€ 47,80
(excl. BTW)
€ 57,85
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 450 stuk(s) vanaf 02 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 + | € 0,956 | € 47,80 |
*prijsindicatie
- RS-stocknr.:
- 258-3766
- Fabrikantnummer:
- IPA040N06NM5SXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | IPA | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series IPA | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 MOSFET 60V in TO-220 FullPAK package meets the requirements for improved system efficiency and lowers system costs. OptiMOS power MOSFET features low RDS(on) of 4.0mOhm improving efficiency. In addition, with its increased power density the TO-220 FullPAK portfolio extension is the excellent solution for synchronous rectification. It is optimized for TV power supply, desktop, adapter and gaming applications.
Low voltage overshoot
Low on-state resistance
Less paralleling required
Generated heat is not diverted to the printed circuit board
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