Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8 IRF7862TRPBF
- RS-stocknr.:
- 257-9324
- Fabrikantnummer:
- IRF7862TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,78
(excl. BTW)
€ 5,785
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- 2.975 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,956 | € 4,78 |
| 50 - 120 | € 0,764 | € 3,82 |
| 125 - 245 | € 0,708 | € 3,54 |
| 250 - 495 | € 0,66 | € 3,30 |
| 500 + | € 0,43 | € 2,15 |
*prijsindicatie
- RS-stocknr.:
- 257-9324
- Fabrikantnummer:
- IRF7862TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 30V single n channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 5V gate drive voltage (called Logic level)
Industry standard surface mount package
Capable of being wave soldered
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7831TRPBF
- Infineon HEXFET Type N-Channel MOSFET, -8 A, -30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET, -8 A, -30 V, 8-Pin SO-8 IRF7328TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8