Infineon HEXFET N-Channel MOSFET, 10 A, 80 V Enhancement, 8-Pin SO-8 IRF7854TRPBF
- RS-stocknr.:
- 257-9322
- Fabrikantnummer:
- IRF7854TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 3,55
(excl. BTW)
€ 4,30
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 2.700 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,71 | € 3,55 |
| 50 - 120 | € 0,588 | € 2,94 |
| 125 - 245 | € 0,554 | € 2,77 |
| 250 - 495 | € 0,512 | € 2,56 |
| 500 + | € 0,496 | € 2,48 |
*prijsindicatie
- RS-stocknr.:
- 257-9322
- Fabrikantnummer:
- IRF7854TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon IRF series is the 80V n channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below 100 kHz
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET, 10 A, 80 V Enhancement, 8-Pin SO-8 IRF7854TRPBF
- Infineon HEXFET N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF
- Infineon HEXFET N-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SO-8
- Infineon HEXFET N-Channel MOSFET, 57 A, 100 V Enhancement SO-8 IRF6644TRPBF
- Infineon HEXFET N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8 IRF7469TRPBF
- Infineon HEXFET N-Channel MOSFET, 14 A, 30 V Enhancement, 8-Pin SO-8 IRF7458TRPBF
- Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7862TRPBF
- Infineon HEXFET N-Channel MOSFET, 6.9 A, 100 V Enhancement, 8-Pin SO-8 IRF7473TRPBF