Infineon HEXFET N-Channel MOSFET, 10 A, 80 V Enhancement, 8-Pin SO-8 IRF7854TRPBF

RS-stocknr.:: 257-9322
Fabrikantnummer:: IRF7854TRPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 10 A, 80 V Enhancement, 8-Pin SO-8 IRF7854TRPBF

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RS-stocknr.:: 257-9322
Fabrikantnummer:: IRF7854TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	80V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	27nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 80V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 27nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IRF7854TRPBF

Infineon HEXFET Series MOSFET, 80V Drain‑Source Voltage, 10A Continuous Drain Current - IRF7854TRPBF

This MOSFET is an N‑channel enhancement device supplied in a surface‑mount SO‑8 package for Compact power switching. It operates across a wide temperature span and is designed for applications requiring moderate power dissipation and low conduction losses. The device conforms to RoHS requirements and is intended for use where efficient switching and thermal endurance are needed.

Features and Benefits:

• 13.4mΩ RDS(on) reduces conduction losses
• 80V VDS enables higher‑voltage switching
• 10A continuous drain current supports sustained loads
• 27nC typical gate charge improves switching control
• 2.5W power dissipation manages thermal stress

Applications

• Suitable for DC motor drive stages
• Ideal for power management in industrial controls
• Used with switching regulators and converters
• Can be used for load switching in telecom equipment
• Suitable for Compact surface‑mounted power modules

What gate voltage limits apply during operation?

The device accepts a gate‑to‑source voltage up to 20V.

What thermal range can it tolerate in demanding environments?

It is specified to operate from -55°C up to 150°C.

How does forward voltage affect conduction under body‑diode conditions?

The forward diode exhibits approximately 1.3V during conduction events.

How many pins and what mounting type are used for PCB implementation?

It comes in an 8‑pin SO‑8 package configured for surface mounting.