Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3

RS-stocknr.:: 256-7413
Fabrikantnummer:: SIHB24N65E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 eenheid)*

€ 5,95

(excl. BTW)

€ 7,20

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 979 stuk(s) vanaf 10 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk
1 - 9	€ 5,95
10 - 24	€ 5,36
25 - 99	€ 5,08
100 - 499	€ 4,48
500 +	€ 3,85

*prijsindicatie

RS-stocknr.:: 256-7413
Fabrikantnummer:: SIHB24N65E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.145Ω
	Typical Gate Charge Qg @ Vgs	122nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.145Ω
	Typical Gate Charge Qg @ Vgs 122nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB24N65E-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 24A Continuous Drain Current - SIHB24N65E-GE3

This power MOSFET is a high-voltage N-channel switching device designed for surface-mount power conversion and control applications. It operates across a wide temperature range and is intended for use where elevated voltage handling, substantial continuous current and compact board mounting are required.

Features and Benefits:

• 650V drain rating enabling high-voltage switching applications
• 24A continuous drain current for substantial load handling
• Rds(on) 0.145Ω reduces conduction losses under load
• 250W maximum dissipation for high-power thermal capability
• Vf 1.2V forward drop minimises diode conduction losses
• Gate charge 122nC supports predictable switching performance

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used with LED drivers requiring high-voltage handling
• Can be used for power factor correction front-ends
• Suitable for inverter and UPS primary switching elements

What gate voltage limits should be observed during design?

The device must not be driven beyond a maximum gate-to-source voltage of 30V to prevent gate-oxide stress.

How does the thermal environment affect continuous current capability?

The specified continuous drain current assumes adequate thermal management

without sufficient heat-sinking or PCB thermal vias, effective current capability will be reduced before reaching the 250W dissipation limit.

What mounting method is required for PCB integration?

It is supplied in a TO-263 package intended for surface-mount assembly and should be soldered to a board pad layout that provides thermal conduction to the copper plane.

What ambient temperature extremes can the device tolerate in operation?

The device is rated to operate from -55°C up to +150°C allowing use in environments with wide temperature variation.