Vishay E Type N-Channel Power MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3

RS-stocknr.:: 228-2842
Fabrikantnummer:: SIHB120N60E-T1-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 2 eenheden)*

€ 10,87

(excl. BTW)

€ 13,152

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 796 stuk(s) vanaf 10 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
2 - 18	€ 5,435	€ 10,87
20 - 98	€ 5,275	€ 10,55
100 - 198	€ 5,06	€ 10,12
200 - 498	€ 4,78	€ 9,56
500 +	€ 4,505	€ 9,01

*prijsindicatie

RS-stocknr.:: 228-2842
Fabrikantnummer:: SIHB120N60E-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	650V
	Series	E
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 650V
	Series E
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB120N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 25A Continuous Drain Current - SIHB120N60E-T1-GE3

This power MOSFET is a high-voltage N-channel device designed for switching and power-conversion tasks in surface-mount assemblies. It operates across an extended temperature range and is intended for applications demanding significant voltage tolerance and thermal performance while complying with RoHS directives.

Features and Benefits:

• 650V drain-to-source withstand enables high-voltage switching
• 25A continuous drain current supports substantial load currents
• 120mΩ Rds(on) reduces conduction losses in power paths
• 179W power dissipation allows sustained thermal load handling
• 30V gate tolerance permits robust gate-drive margins
• 30nC typical gate charge for predictable switching energy

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used for DC-DC conversion in telecom equipment
• Can be used for power-factor-correction circuits
• Appropriate for UPS and battery-management switching

What thermal range can this device tolerate during operation?

It is rated to function from -55°C up to 150°C, permitting use in demanding thermal environments.

How is the device packaged for PCB assembly?

It comes in a TO-263 surface-mount package with three terminals for efficient board mounting and heat dissipation.

What switching behaviour can I expect regarding gate drive?

With a maximum gate-source voltage of 30V and a typical gate charge of 30nC, the gate-drive requirements are moderate and predictable for common gate-driver circuits.

Is this part suitable for automotive-spec applications?

It is not designated to automotive standards, so it should not be selected where automotive certification is required.