Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3

RS-stocknr.:: 256-7364
Fabrikantnummer:: SI5442DU-T1-GE3
Fabrikant:: Vishay

Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 660,00

(excl. BTW)

€ 810,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 10 mei 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,22	€ 660,00

*prijsindicatie

RS-stocknr.:: 256-7364
Fabrikantnummer:: SI5442DU-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	20V
	Package Type	PowerPAK ChipFET
	Series	SI5442DU
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0135Ω
	Typical Gate Charge Qg @ Vgs	16.6nC
	Maximum Power Dissipation Pd	31W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	8V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	0.85mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 20V
	Package Type PowerPAK ChipFET
	Series SI5442DU
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0135Ω
	Typical Gate Charge Qg @ Vgs 16.6nC
	Maximum Power Dissipation Pd 31W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 8V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 0.85mm
	Automotive Standard No

Datasheet - SI5442DU-T1-GE3

Vishay SI5442DU Series MOSFET, 20V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SI5442DU-T1-GE3

This MOSFET is an N-channel switching transistor designed for high-current power-management roles in compact surface-mounted assemblies. It performs as a low-voltage power device suitable for DC-DC converters and synchronous switching topologies, operating across a wide ambient range for demanding thermal environments.

Features and Benefits:

• Very low on-resistance 0.0135Ω enabling reduced conduction losses
• Continuous drain capability 25A supporting high-current rails
• Drain‑source withstand 20V allowing low-voltage power stages
• Gate tolerance up to 8V permitting flexible drive schemes
• Typical total gate charge 16.6nC for efficient switching control
• Power dissipation 31W enabling sustained thermal loading

Applications

• Suitable for synchronous buck converter outputs
• Ideal for automotive‑grade power distribution modules
• Used for high-current load switching in industrial equipment
• Can be used for telecoms power supply stages
• Suitable for point‑of‑load regulation on compact boards

What thermal range can the device tolerate in deployment?

It is specified to operate from -55°C up to +150°C, accommodating both cold-start and high-temperature operating conditions.

How does the forward voltage affect efficiency in low-voltage systems?

The typical forward voltage of 1.2V across the intrinsic diode reduces dead-time losses and contributes to overall converter efficiency during synchronous operation.

Which package and mounting style are provided for board assembly?

The component is supplied in an 8‑pin PowerPAK ChipFET format intended for surface mounting to enable compact layout and effective thermal pathways.

Is the product compliant with material-restriction directives?

The component meets RoHS requirements, restricting certain hazardous substances in the device composition.