DiodesZetex Type P-Channel MOSFET, 10.7 A, 12 V Enhancement PowerDI5060-8 DMPH33M8SPSW-13
- RS-stocknr.:
- 254-8640
- Fabrikantnummer:
- DMPH33M8SPSW-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,25
(excl. BTW)
€ 13,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 2.495 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,25 | € 11,25 |
| 50 - 95 | € 2,13 | € 10,65 |
| 100 - 245 | € 1,968 | € 9,84 |
| 250 - 995 | € 1,928 | € 9,64 |
| 1000 + | € 1,312 | € 6,56 |
*prijsindicatie
- RS-stocknr.:
- 254-8640
- Fabrikantnummer:
- DMPH33M8SPSW-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerDI5060-8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerDI5060-8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.73W | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose inte
Low on resistance
High conversion energy
Halogen and antimony Free
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