DiodesZetex Type P-Channel MOSFET, 10.7 A, 12 V Enhancement PowerDI5060-8
- RS-stocknr.:
- 254-8639
- Fabrikantnummer:
- DMPH33M8SPSW-13
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 2500 eenheden)*
€ 2.460,00
(excl. BTW)
€ 2.977,50
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,984 | € 2.460,00 |
*prijsindicatie
- RS-stocknr.:
- 254-8639
- Fabrikantnummer:
- DMPH33M8SPSW-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerDI5060-8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerDI5060-8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose inte
Low on resistance
High conversion energy
Halogen and antimony Free
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