STMicroelectronics A2F SiC Power Module, 75 A, 1200 V Enhancement ACEPACK 2
- RS-stocknr.:
- 249-6717
- Fabrikantnummer:
- A2F12M12W2-F1
- Fabrikant:
- STMicroelectronics
Subtotaal (1 tray van 18 eenheden)*
€ 4.040,658
(excl. BTW)
€ 4.889,196
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 18 + | € 224,481 | € 4.040,66 |
*prijsindicatie
- RS-stocknr.:
- 249-6717
- Fabrikantnummer:
- A2F12M12W2-F1
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | A2F | |
| Package Type | ACEPACK 2 | |
| Mount Type | Chassis | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series A2F | ||
Package Type ACEPACK 2 | ||
Mount Type Chassis | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Four pack topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
Excellent switching performance that is virtually independent of temperature
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