Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23 ISS55EP06LMXTSA1
- RS-stocknr.:
- 244-2278
- Fabrikantnummer:
- ISS55EP06LMXTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 1,98
(excl. BTW)
€ 2,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 8.340 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 135 | € 0,132 | € 1,98 |
| 150 - 360 | € 0,125 | € 1,88 |
| 375 - 735 | € 0,079 | € 1,19 |
| 750 - 1485 | € 0,067 | € 1,01 |
| 1500 + | € 0,06 | € 0,90 |
*prijsindicatie
- RS-stocknr.:
- 244-2278
- Fabrikantnummer:
- ISS55EP06LMXTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ISS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ISS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel Power MOSFET has a design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.
P-Channel
Low On-resistance RDS(on)
100% Avalanche tested
Logic level or normal level
Enhancement mode
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
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