Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223
- RS-stocknr.:
- 244-2270
- Fabrikantnummer:
- IPN60R600PFD7SATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 693,00
(excl. BTW)
€ 840,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,231 | € 693,00 |
*prijsindicatie
- RS-stocknr.:
- 244-2270
- Fabrikantnummer:
- IPN60R600PFD7SATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss, excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Enables high power density designs and small form factors
Enables efficiency gains at higher switching frequencies
Excellent commutation ruggedness
Easy to select the right parts and optimize the design
Gerelateerde Links
- Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
- Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1
- Infineon IPN Type N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 6.1 A, 75 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 3 A, 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223 IPN60R360PFD7SATMA1