Infineon IPN Type N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223
- RS-stocknr.:
- 244-2268
- Fabrikantnummer:
- IPN60R360PFD7SATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 894,00
(excl. BTW)
€ 1.083,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,298 | € 894,00 |
*prijsindicatie
- RS-stocknr.:
- 244-2268
- Fabrikantnummer:
- IPN60R360PFD7SATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R360PFD7S in a SOT-223 package features RDS(on) of 360mOhm resulting in low switching losses.
Very low FOM RDS(on) x Eoss
Integrated robust fast body diode
Up to 2kV ESD protection
Wide range of RDS(on) values
Excellent commutation ruggedness
Low EMI
Broad package portfolio
Gerelateerde Links
- Infineon IPN Type N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223 IPN60R360PFD7SATMA1
- Infineon IPN Type N-Channel MOSFET, 3 A, 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 3 A, 650 V, 3-Pin SOT-223 IPN60R2K0PFD7SATMA1
- Infineon IPN Type N-Channel MOSFET, 6.1 A, 75 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET, 6.1 A, 75 V, 3-Pin SOT-223 IPN50R2K0CEATMA1
- Infineon IPN Type N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1
