Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN
- RS-stocknr.:
- 240-6635
- Fabrikantnummer:
- IQE050N08NM5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 4.825,00
(excl. BTW)
€ 5.840,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,965 | € 4.825,00 |
*prijsindicatie
- RS-stocknr.:
- 240-6635
- Fabrikantnummer:
- IQE050N08NM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.73V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.73V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 80V PQFN 3.3x3.3 Source-Down features 80 V and low RDS(on) of 5.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
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