Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3
- RS-stocknr.:
- 239-8632
- Fabrikantnummer:
- SiHH105N60EF-T1GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 5,94
(excl. BTW)
€ 7,19
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 1.494 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 5,94 |
| 10 - 49 | € 5,59 |
| 50 - 99 | € 5,05 |
| 100 - 249 | € 4,75 |
| 250 + | € 4,45 |
*prijsindicatie
- RS-stocknr.:
- 239-8632
- Fabrikantnummer:
- SiHH105N60EF-T1GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.091Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 174W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.091Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 174W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 26A Maximum Continuous Drain Current - SiHH105N60EF-T1GE3
This power MOSFET is a high-voltage switching transistor designed for surface-mount applications in industrial and automotive environments. It operates across a wide temperature span and is intended for circuits requiring robust high-voltage switching with moderate continuous current capacity and gate drive characteristics.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching
• 26A continuous drain current supports substantial load currents
• 0.091Ω low Rds(on) reduces conduction losses
• 174W power dissipation allows sustained thermal loading
• 33nC typical gate charge enables predictable drive requirements
• 30V gate-rated voltage supports common gate-drive schemes
• 26A continuous drain current supports substantial load currents
• 0.091Ω low Rds(on) reduces conduction losses
• 174W power dissipation allows sustained thermal loading
• 33nC typical gate charge enables predictable drive requirements
• 30V gate-rated voltage supports common gate-drive schemes
Applications
• Suitable for high-voltage DC-DC converters in industrial power supplies
• Ideal for automotive power modules meeting AEC‑Q101 needs
• Used for primary-side switching in SMPS and inverters
• Can be used for motor drive half‑bridge stages in electrified systems
• Suitable for ruggedised electronic assemblies requiring surface mounting
• Ideal for automotive power modules meeting AEC‑Q101 needs
• Used for primary-side switching in SMPS and inverters
• Can be used for motor drive half‑bridge stages in electrified systems
• Suitable for ruggedised electronic assemblies requiring surface mounting
What mounting format does it use for compact assemblies?
It is supplied in a PowerPAK 8x8 format designed for surface mounting to facilitate dense PCB layouts and thermal coupling to copper pours.
How does it perform across temperature extremes?
It is specified to operate from -55°C up to +150°C, so it can function in demanding ambient and elevated junction scenarios when cooled appropriately.
What gate-drive constraints should be observed?
The device must not be driven beyond a gate-source voltage of 30V and typical gate charge is 33nC, which informs peak drive current and driver selection.
Is it suitable for automotive qualification requirements?
The device meets the AEC‑Q101 automotive standard, making it appropriate for vehicle‑grade electronic designs that require that qualification.
Gerelateerde Links
- Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3
- Vishay EF Type N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay EF Type N-Channel MOSFET, 23 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET, 36 A, 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET, 16 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3