Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3
- RS-stocknr.:
- 252-0263
- Fabrikantnummer:
- SIHK055N60EF-T1GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 2000 eenheden)*
€ 7.066,00
(excl. BTW)
€ 8.550,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 2.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 3,533 | € 7.066,00 |
*prijsindicatie
- RS-stocknr.:
- 252-0263
- Fabrikantnummer:
- SIHK055N60EF-T1GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.05mΩ | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 236W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.05mΩ | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 236W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Width 5.15mm | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 40A Drain Current - SIHK055N60EF-T1GE3
This power MOSFET is a high-voltage switching transistor intended for demanding power conversion and control environments. It is a surface-mount N-channel depletion device that operates across a broad thermal range and is suited to applications requiring high-voltage handling, substantial continuous current and controlled gate-drive behaviour.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching capability
• 40A continuous drain current supports heavy-load operation
• 0.05mΩ Rds(on) minimises conduction losses at high currents
• 90nC typical gate charge allows predictable switching energy
• 236W maximum power dissipation handles significant thermal stress
• 20V gate tolerance permits robust gate-drive margins
• 40A continuous drain current supports heavy-load operation
• 0.05mΩ Rds(on) minimises conduction losses at high currents
• 90nC typical gate charge allows predictable switching energy
• 236W maximum power dissipation handles significant thermal stress
• 20V gate tolerance permits robust gate-drive margins
Applications
• Used with industrial power converters and inverters
• Suitable for high-voltage motor drive stages
• Ideal for DC-DC conversion in heavy-duty systems
• Can be used for traction or automotive power modules
• Used for high-power switch arrays in energy systems
• Suitable for high-voltage motor drive stages
• Ideal for DC-DC conversion in heavy-duty systems
• Can be used for traction or automotive power modules
• Used for high-power switch arrays in energy systems
What thermal extremes can the device endure in service?
It is rated to operate from -55°C up to +150°C, permitting use in environments with wide temperature variation.
How is the component mounted on a board and what package is provided?
The device is supplied in a PowerPAK 10x12 surface-mount package designed for low-inductance PCB mounting and efficient thermal contact.
What regulatory or industry readiness does it offer for automotive use?
It meets AEC-Q101 requirements for semiconductor qualification suitable for automotive electronic systems.
What pin-count should designers expect when creating PCB footprints?
The component presents an 8-pin layout, which should be accommodated in the PCB land pattern for correct placement and routing.
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