Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- RS-stocknr.:
- 239-5397
- Fabrikantnummer:
- SISA10BDN-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.299,00
(excl. BTW)
€ 1.572,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,433 | € 1.299,00 |
*prijsindicatie
- RS-stocknr.:
- 239-5397
- Fabrikantnummer:
- SISA10BDN-T1-GE3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8PT | |
| Series | SISA10BDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0036Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8PT | ||
Series SISA10BDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0036Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3
Features and Benefits:
• High continuous drain current 104A supports heavy-load switching
• Drain-source voltage rating 30V allows low-voltage power designs
• Typical gate charge 11.7nC yields quicker gate drive transitions
• Maximum power dissipation 63W permits sustained thermal load handling
• Gate-source withstand 20V provides headroom for diverse drive voltages
Applications
• Ideal for motor driver half-bridges in compact inverters
• Used with high-current load switches in server power rails
• Can be used for battery management in high-drain systems
• Suitable for solid-state relays and automotive-style power modules
What mounting method is required for reliable assembly?
How does ambient temperature affect operating capability?
What type of conduction channel does it use?
Is the device compliant with environmental restrictions?
Gerelateerde Links
- Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- Vishay SiSA14BDN Type N-Channel MOSFET, 72 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA14BDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET, 87 A, 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- Vishay Type N-Channel MOSFET, 44.4 A, 60 V Depletion, 8-Pin PowerPAK 1212-8PT SISA18BDN-T1-GE3
- Vishay Type N-Channel MOSFET, 44.4 A, 60 V Depletion, 8-Pin PowerPAK 1212-8PT
- Vishay TrenchFET P-Channel MOSFET, -104 A, -20 V Enhancement, 8-Pin PowerPAK 1212-8SH SISH521EDN-T1-GE3
- Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3
- Vishay Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8 SI7232DN-T1-GE3
