Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3

RS-stocknr.:: 180-7358
Fabrikantnummer:: SIS412DN-T1-GE3
Fabrikant:: Vishay

Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 1.050,00

(excl. BTW)

€ 1.260,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 3.000 stuk(s) vanaf 10 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,35	€ 1.050,00

*prijsindicatie

RS-stocknr.:: 180-7358
Fabrikantnummer:: SIS412DN-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK 1212-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.03Ω
	Maximum Power Dissipation Pd	15.6W
	Typical Gate Charge Qg @ Vgs	3.8nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	0.79mm
	Length	3.61mm
	Standards/Approvals	IEC 61249-2-21
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK 1212-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.03Ω
	Maximum Power Dissipation Pd 15.6W
	Typical Gate Charge Qg @ Vgs 3.8nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 0.79mm
	Length 3.61mm
	Standards/Approvals IEC 61249-2-21
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SIS412DN-T1-GE3

This MOSFET is a surface‑mounted N‑channel transistor designed for power switching in compact electronic systems. It operates at a maximum drain-source voltage of 30V and supports sustained drain currents suitable for medium‑power applications. The component is intended for board‑level mounting in designs where low conduction losses and moderate power handling are required, functioning reliably across a broad temperature span.

Features and Benefits:

• Low on‑resistance of 0.03 Ω for reduced conduction losses
• Maximum continuous drain current 12A for higher load capability
• Typical gate charge Qg 3.8 nC enabling faster switching transitions
• Power dissipation rating 15.6W for sustained thermal performance
• Gate-source voltage tolerance ±20V for drive flexibility
• Operating range from -55 to 150 °C for wide‑temperature deployment

Applications

• Suitable for synchronous buck converters in compact supplies
• Ideal for battery management and power‑distribution stages
• Used with motor drivers requiring high current switching
• Can be used for load switches in telecommunications equipment
• Useful in LED drivers where low Rds(on) reduces heat

What package type should I expect for footprint planning?

The device is supplied in a PowerPAK 1212‑8 surface‑mount package measuring 3.61 x 3.61mm, allowing high‑density PCB layouts and efficient thermal contact to copper planes.

How does the device behave thermally under load?

At its maximum power dissipation of 15.6W the device requires appropriate PCB thermal design since junction‑to‑ambient heat must be managed to stay within the 150 °C maximum operating temperature.

What switching characteristics affect driver selection?

With a typical gate charge of 3.8 nC the gate drive must supply short current pulses during transitions

this lowers switching losses but requires consideration of driver peak current and gate resistance.

Are there limits on reverse conduction for use in synchronous circuits?

The forward voltage is specified as 1.2V so body‑diode conduction and recovery behaviour should be evaluated in synchronous‑rectification topologies to assess losses during reverse current events.