Vishay N-Channel MOSFET, 34 A, 650 V, 8-Pin PowerPAK 10 x 12 SIHK065N60E-T1-GE3
- RS-stocknr.:
- 239-5378
- Fabrikantnummer:
- SIHK065N60E-T1-GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 239-5378
- Fabrikantnummer:
- SIHK065N60E-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PowerPAK 10 x 12 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Number of Elements per Chip | 1 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PowerPAK 10 x 12 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 1 | ||
The Vishay E series power MOSFET has drain current of 34 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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