STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- RS-stocknr.:
- 233-0475
- Fabrikantnummer:
- SCTWA70N120G2V-4
- Fabrikant:
- STMicroelectronics
Subtotaal (1 eenheid)*
€ 34,86
(excl. BTW)
€ 42,18
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 34,86 |
*prijsindicatie
- RS-stocknr.:
- 233-0475
- Fabrikantnummer:
- SCTWA70N120G2V-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA70N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 547W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 2.7V | |
| Maximum Operating Temperature | 200°C | |
| Length | 34.8mm | |
| Width | 15.6 mm | |
| Height | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA70N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 547W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 2.7V | ||
Maximum Operating Temperature 200°C | ||
Length 34.8mm | ||
Width 15.6 mm | ||
Height 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
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