onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF
- RS-stocknr.:
- 230-9082
- Fabrikantnummer:
- NTBL082N65S3HF
- Fabrikant:
- onsemi
Subtotaal (1 rol van 2000 eenheden)*
€ 8.472,00
(excl. BTW)
€ 10.252,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 2.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 4,236 | € 8.472,00 |
*prijsindicatie
- RS-stocknr.:
- 230-9082
- Fabrikantnummer:
- NTBL082N65S3HF
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | H-PSOF | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 313W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 13.28mm | |
| Standards/Approvals | Pb-Free Halide free non AEC-Q and PPAP | |
| Width | 2.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type H-PSOF | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 313W | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 13.28mm | ||
Standards/Approvals Pb-Free Halide free non AEC-Q and PPAP | ||
Width 2.4 mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.
High power density
Kelvin Source Configuration
Low gate noise and switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Moisture Sensitivity Level 1 guarantee
High reliability in humid ambient condition
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