onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF
- RS-stocknr.:
- 230-9082
- Fabrikantnummer:
- NTBL082N65S3HF
- Fabrikant:
- onsemi
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 230-9082
- Fabrikantnummer:
- NTBL082N65S3HF
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | H-PSOF | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 313W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 13.28mm | |
| Length | 10.2mm | |
| Standards/Approvals | Pb-Free Halide free non AEC-Q and PPAP | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type H-PSOF | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 313W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 13.28mm | ||
Length 10.2mm | ||
Standards/Approvals Pb-Free Halide free non AEC-Q and PPAP | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.
High power density
Kelvin Source Configuration
Low gate noise and switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Moisture Sensitivity Level 1 guarantee
High reliability in humid ambient condition
Gerelateerde Links
- onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF NTBL082N65S3HF
- onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF
- onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H
- onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247
- onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H
- onsemi SUPERFET III Type N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET & Diode, 24 A, 650 V Enhancement, 3-Pin TO-263
- onsemi SUPERFET III Type N-Channel MOSFET & Diode, 24 A, 650 V Enhancement, 3-Pin TO-263 FCB125N65S3