onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H
- RS-stocknr.:
- 221-6706
- Fabrikantnummer:
- NTBL050N65S3H
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 18,96
(excl. BTW)
€ 22,94
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tekort aan aanbod
- Plus verzending 1.990 stuk(s) vanaf 05 januari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 9,48 | € 18,96 |
| 20 - 198 | € 8,17 | € 16,34 |
| 200 + | € 7,085 | € 14,17 |
*prijsindicatie
- RS-stocknr.:
- 221-6706
- Fabrikantnummer:
- NTBL050N65S3H
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTBL050N65S | |
| Package Type | H-PSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 305W | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.4 mm | |
| Height | 11.47mm | |
| Standards/Approvals | No | |
| Length | 10.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTBL050N65S | ||
Package Type H-PSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 305W | ||
Maximum Operating Temperature 175°C | ||
Width 2.4 mm | ||
Height 11.47mm | ||
Standards/Approvals No | ||
Length 10.8mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 909 pF
100% avalanche tested
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