onsemi NTMF Type N-Channel MOSFET, 79 A, 120 V P, 8-Pin SO-8 NTMFS008N12MCT1G
- RS-stocknr.:
- 229-6467
- Fabrikantnummer:
- NTMFS008N12MCT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 12,52
(excl. BTW)
€ 15,15
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,504 | € 12,52 |
| 50 - 95 | € 2,158 | € 10,79 |
| 100 - 495 | € 1,872 | € 9,36 |
| 500 - 995 | € 1,644 | € 8,22 |
| 1000 + | € 1,496 | € 7,48 |
*prijsindicatie
- RS-stocknr.:
- 229-6467
- Fabrikantnummer:
- NTMFS008N12MCT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | NTMF | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 102W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1mm | |
| Standards/Approvals | No | |
| Length | 6.3mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series NTMF | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 102W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 1.1mm | ||
Standards/Approvals No | ||
Length 6.3mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel power MOSFET flat lead package designed for compact and efficient designs and including high thermal performance. It is used switching power supplies, power switches, battery management and protection.
Minimize conduction losses
Minimize driver losses
RoHS compliant
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