onsemi NTK Type P-Channel MOSFET, 263 A, 30 V P, 8-Pin SO-8 NTMFS002P03P8ZT1G
- RS-stocknr.:
- 229-6465
- Fabrikantnummer:
- NTMFS002P03P8ZT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 16,01
(excl. BTW)
€ 19,37
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 1.500 stuk(s) vanaf 21 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,202 | € 16,01 |
| 50 - 95 | € 2,76 | € 13,80 |
| 100 + | € 2,392 | € 11,96 |
*prijsindicatie
- RS-stocknr.:
- 229-6465
- Fabrikantnummer:
- NTMFS002P03P8ZT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 263A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | NTK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 217nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 138.9W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Length | 6.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 263A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series NTK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 217nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 138.9W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Length 6.3mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel power MOSFET has ultra low on state resistance. It has 226 A of drain current. It is used in power load switch and battery management.
Improve system efficiency
Space saving
Excellent thermal conduction
Pb-free
Halogen free/BFR free
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