Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

RS-stocknr.:: 228-2836
Fabrikantnummer:: SIHA24N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

Subtotaal (1 tube van 50 eenheden)*

€ 84,75

(excl. BTW)

€ 102,55

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 650 stuk(s) vanaf 10 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 +	€ 1,695	€ 84,75

*prijsindicatie

RS-stocknr.:: 228-2836
Fabrikantnummer:: SIHA24N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-220
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	184mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	59nC
	Maximum Power Dissipation Pd	35W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-220
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 184mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 59nC
	Maximum Power Dissipation Pd 35W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHA24N80AE-GE3

Vishay Series E Power MOSFET, 850V Drain-Source Voltage, 9A Continuous Drain Current - SIHA24N80AE-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-control roles in through-hole assemblies. It is supplied in a TO-220 package suitable for traditional mounting methods and is engineered to operate across a wide thermal span for demanding electronic systems.

Features and Benefits:

• 850V drain capability for high-voltage switching applications
• 9A continuous drain current for sustained power handling
• 184mΩ Rds(on) reduces conduction losses at operating currents
• 35W maximum dissipation allows significant power throughput
• 59nC typical gate charge enables predictable switching dynamics
• 30V gate rating supports common gate-drive voltages

Applications

• Suitable for high-voltage switch-mode power supplies
• Used for industrial motor-drive switching stages
• Ideal for mid-power inverter and converter designs
• Can be used for DC-DC conversion in telecom equipment
• Suitable for laboratory and prototyping through-hole builds

What temperature extremes can it withstand in operation?

It functions from -55°C up to 150°C, allowing use in harsh thermal environments.

How does the forward voltage affect switching circuits?

The 1.2V forward voltage influences conduction drop during body-diode conduction and should be considered when estimating reverse-recovery losses.

Is the device suitable for automotive electronic systems?

It is not specified to automotive standards, so additional validation is recommended for vehicle applications.

What mounting and connection considerations apply for thermal management?

The TO-220 through-hole format permits direct heatsinking to the tab for improved thermal dissipation up to the stated power limit.