Vishay E Type N-Channel Power MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

RS-stocknr.:: 228-2840
Fabrikantnummer:: SiHA5N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

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RS-stocknr.:: 228-2840
Fabrikantnummer:: SiHA5N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	850V
	Series	E
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Power Dissipation Pd	29W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 850V
	Series E
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Power Dissipation Pd 29W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiHA5N80AE-GE3

Vishay Series E Power MOSFET, 850V Drain Source Voltage, 3A Continuous Drain Current - SiHA5N80AE-GE3

This power MOSFET is a high‑voltage N‑channel transistor designed for switching and amplification tasks in demanding electronic systems. It operates across a wide thermal range and is supplied in a through‑hole TO‑220 package for straightforward board mounting, making it suitable for industrial assemblies where robust voltage handling and accessible mounting are required.

Features and Benefits:

• 850V drain rating enables high‑voltage switching applications
• 3A continuous current supports moderate load currents
• 29W power dissipation allows sustained thermal loading
• 1.35Ω Rds(on) provides predictable conduction losses
• 11nC typical gate charge ensures manageable gate‑drive requirements
• 30V maximum gate voltage permits common gate‑drive voltages

Applications

• Suitable for high‑voltage power conversion stages
• Ideal for industrial motor‑drive front ends
• Used with snubbered switching supplies and inverters
• Can be used for high‑voltage laboratory test equipment
• Suitable for discrete switch implementations in power control

What temperature extremes can it withstand during operation?

It is specified to function from -55°C up to 150°C, covering a wide industrial operating envelope.

How is it mounted and integrated into legacy designs?

The component comes in a TO‑220 through‑hole format, facilitating soldered or screw‑down heatsink attachments and easy replacement on conventional boards.

What gate‑drive considerations should be observed?

Ensure gate‑drive amplitude does not exceed 30V and provide sufficient drive strength for the 11nC typical gate charge to achieve the desired switching speeds.

Is it suitable for automotive‑certified projects?

It is not supplied with automotive standard approval and should not be assumed to be compliant with vehicle‑specific qualification requirements.