STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK SCTH35N65G2V-7AG
- RS-stocknr.:
- 224-9999
- Fabrikantnummer:
- SCTH35N65G2V-7AG
- Fabrikant:
- STMicroelectronics
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€ 14,52
(excl. BTW)
€ 17,57
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Laatste voorraad RS
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 14,52 |
| 5 - 9 | € 13,79 |
| 10 - 24 | € 12,89 |
| 25 - 49 | € 12,58 |
| 50 + | € 12,25 |
*prijsindicatie
- RS-stocknr.:
- 224-9999
- Fabrikantnummer:
- SCTH35N65G2V-7AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.25mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.3V | ||
Maximum Operating Temperature 175°C | ||
Height 15.25mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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