STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK
- RS-stocknr.:
- 224-9997
- Fabrikantnummer:
- SCTH35N65G2V-7AG
- Fabrikant:
- STMicroelectronics
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 224-9997
- Fabrikantnummer:
- SCTH35N65G2V-7AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.3V | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.25mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.3V | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 175°C | ||
Height 15.25mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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