Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1
- RS-stocknr.:
- 222-4902
- Fabrikantnummer:
- IPD60R180C7ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,06
(excl. BTW)
€ 14,595
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 1.495 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,412 | € 12,06 |
| 25 - 45 | € 2,122 | € 10,61 |
| 50 - 120 | € 1,978 | € 9,89 |
| 125 - 245 | € 1,834 | € 9,17 |
| 250 + | € 1,714 | € 8,57 |
*prijsindicatie
- RS-stocknr.:
- 222-4902
- Fabrikantnummer:
- IPD60R180C7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD50R | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 0.9V | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD50R | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 0.9V | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Gerelateerde Links
- Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 10-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 10-Pin TO-252 IPDD60R190G7XTMA1
- Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1
- Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPD50R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1