Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1
- RS-stocknr.:
- 222-4900
- Fabrikantnummer:
- IPD50R800CEAUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 15,00
(excl. BTW)
€ 18,25
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 7.400 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,60 | € 15,00 |
| 125 - 225 | € 0,462 | € 11,55 |
| 250 - 600 | € 0,432 | € 10,80 |
| 625 - 1225 | € 0,402 | € 10,05 |
| 1250 + | € 0,372 | € 9,30 |
*prijsindicatie
- RS-stocknr.:
- 222-4900
- Fabrikantnummer:
- IPD50R800CEAUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IPD50R | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.83V | |
| Maximum Power Dissipation Pd | 40W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IPD50R | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.83V | ||
Maximum Power Dissipation Pd 40W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (E oss)
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
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